Solar photovoltaic (pv) net news: from low subsidies to domestic photovoltaic industry is currently in centralized price bidding mode transition to parity with Internet access, in the face of change, the domestic component enterprises are also actively explore, expected by the changes of cell technology, components, power parity on the Internet. We can see, on the one hand, through the module efficiency and capacity of ascension to compress system and efficiency in the relevant part of the cost, which makes the single crystal technology into the mainstream; On the other hand through the wafer size increase to promote power components, and reduce the cost associated with the number of components of BOS.
the industry for components by increasing the size of silicon wafer ascending power can reduce the cost of BOS is still lack of enough understanding, and in the industry at this stage there are two kinds of single crystal silicon wafer size, to some extent makes how to analyze the influence of components on the system cost becomes relatively difficult. This article according to the specific project, precise calculation when using the two silicon specifications the BOS cost of photovoltaic power station, clarity for the investors.
the size of the large single crystal wafers there are two routes: one is the fine-tuning, silicon margin slightly increased to 158. 75 mm, but the basic fill (monocrystalline silicon slice of the chamfering G1 silicon wafer) , silicon area of M2 rose 3. 1%, corresponding to the power of 390 w type 72 components; One is the innovation, the silicon margin to 166 mm, retain about 0. 5% of chamfering area ratio ( M6 silicon wafer) Compared with the margin, 156. Area of 75 M2 of silicon significantly improved the 12. 2%, and the corresponding component power is 425 w. It is understood that two specifications silicon rods with 223 mm diameter, are compatible with the existing battery production line, do not need to change the tube furnace.
in view of the above two kinds of components, we selected the baotou in Inner Mongolia, heilongjiang daqing, TuanFeng county of hubei province as the measure, in order to 1. 6 mw square as a comparison unit, combined with our experience in product cost, makes a detailed comparison of the power plant system costs, the size of the two component performance parameters using typical manufacturer specification data. Square plane diagram is as follows.
the following introduction in baotou project as an example, the design of the bracket with two rows of vertical loading, the visible components power increases the number of the stent, basic group, number of cable, save string type inverter, including cable number the number of the connection and grounding are brought into consideration. Using 425 w components support cost was reduced by 3. 3 / W; Base adopts screw pile, cost down 1. 1 / W; Line points/W; Inverter cost reduce 1. 3 / W. Installation cost includes components within phalanx, bracket, foundation, cable etc all installations, according to 6. Saving of 3% also reduces the 1 / W, only on the initial cost of land, 390 W components by using the silicon efficiency slightly higher and the cost is lower than 425 W components, but the cost amount is small. Together, using the M6 silicon components in comparison with 390 w, 425 w component can reduce 8. 3 / W BOS cost.
similarly, located in the northeast of heilongjiang daqing and hubei TuanFeng test form two projects are as follows. In daqing and TuanFeng components is 390 w, 425 w on the BOS end saved 8, respectively. 4 / W and 8. Eight points/W.
according to the north, northeast, central three areas of the concrete measure, components using M6 monocrystalline silicon than G1 silicon of BOS/W above cost savings up to 8 points, so for plant investors should certainly preferable application in parity project M6 425 W high power single crystal silicon components.
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