China's silicon road to pursue

Silicon is the basis of the integrated circuit industry, is the core of the wafer manufacturing materials. Mainland China 8 inch, 12-inch wafers independent supply ability is weak, is highly dependent on imports, is short of the integrated circuit industry chain. In recent years, under the policy support and industry efforts, have already emerged some high quality companies, silicon wafer production capacity will be in the next few years will gradually fall to the ground, to complete the development of silicon industry road to pursue.

silicon is the basic material, chip manufacturing for silicon material manufacturing sheet object, usually made of high purity of crystalline silicon. Compared with other materials, the molecular structure of the crystalline silicon is very stable, very few free electron, electrical conductivity is extremely low. Semiconductor devices are based on silicon wafer using the measures of the photolithography, etching, ion implantation, change the molecular structure of the silicon, in turn, improve the electrical conductivity, finally get a low conductive ability of products. Silicon main applications in the field of semiconductor and photovoltaic solar energy (pv), the main difference on the type, purity, surface properties:

the semiconductor wafer surface roughness, smoothness and cleanliness requirements is more high than photovoltaic solar energy, need to pass a subsequent grinding chamfering, polishing, cleaning, etc.

high specifications for the manufacturing process of semiconductor silicon complex, the four key steps include polycrystalline silicon and polysilicon materials for the purification of ingot casting, growth of single crystal silicon, and silicon wafer cutting shape. As a wafer manufacturing raw materials, the quality of silicon wafer directly determines the stability of the wafer manufacturing.

silicon and silicon based materials is one of the largest base of wafer manufacturing accounted the core material. More than 90% of the semiconductor chip is made of silicon as the base material. Global semiconductor wafers in 2018 for $12. 3 billion, accounting for wafer manufacturing materials for 37% of the total of $32. 2 billion, ranked no. 1.

silicon products according to the machining process can be divided into various annealing section, epitaxial slice, spacer and silicon on insulator five categories of products. Among them, the crystal is the most widely application scope, flowing dosage the biggest, the most basic products, other silicon products are also on the basis of various secondary processing.

various cutting out directly from the single crystal silicon column about 1 mm thickness of the original silicon wafer, and then carries on the polishing mirror processing, get the surface smooth and clean polished section, through the further purification, to reduce heavy metal impurities.

annealing is through the various in the environment of high temperature annealing of the filled with argon gas or oxygen, which can greatly reduce the oxygen content on the surface of the polished section, thereby better crystal integrity ( 水晶完美) To meet demand higher semiconductor etching.

epitaxial wafer is through the various surface by using gas phase growth technology ( 气相生长或外延) , in various surface extension gives birth to single crystal structure layer, so the surface will be more smooth than the cut and polished section, thus reducing surface defects.

section spacer is to pass on the basis of various, the first is through photolithography, ion implantation and thermal diffusion technology embedded technology such as the middle layer, and then by gas phase growth technology to form a smooth on the outside of the silicon epitaxial layer, so as to meet the specific substrate performance requirements. SOI (

Insulators on silicon wafer) Is the sandwich structure, the bottom is various, the middle layer is buried oxide layer ( 框) , the top is the active layer is various; BOX makes the existence of SOI high electrical insulation, so as to reduce the parasitic capacitance and leakage, which in turn can realize high integration devices, low power consumption, high reliability, the activity of the top layer also can use doping silicon metal elements so as to realize different functions.

with the improvement of tyra single crystal technology, the size of the silicon wafer gradually increase along with the development of the time, from 2 inches ( 50mm） , to 4 inches ( 100mm） And 5 inch ( 125毫米) And 6 inch ( 150毫米) 8 inch (, 200毫米) And in 2000 to 12 inch ( 300毫米) 。 12 inch silicon next stop is 18 inches ( 450毫米) Silicon, but due to equipment research and development more difficult, the current factory to 18 inches of driving force is not big, the mainstream technology is given priority to with 12 inch and 8 inch wafer.

large size wafer become a trend for the future development of silicon. In order to improve the production efficiency to reduce cost, large size wafer are used more and more, as the size, number of chips in a single slice of silicon wafer manufacturing will be the more; At the same time on the circular wafer manufacturing rectangular silicon can make the wafer edge some areas can not be used to bring part of the waste, with the increase of the size of the wafer, loss ratio will decrease; Both will reduce the cost of the chip. Under the same process conditions, for example, 300 mm semiconductor wafers can use area of more than twice the 200 mm silicon wafers, can use ( Wafer can be measured in the number of chips, Is the 2 200 mm silicon wafers. About five times.

in figure 5. 200 mm silicon wafers and 300 mm silicon wafers using area diagram ( Source: united microelectronics, silicon industry, huaxia happiness industry research institute)

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